高压下GaN的光学特性

J4 ›› 2010, Vol. 45 ›› Issue (1): 69-72.

高压下GaN的光学特性

柳福提张淑华高增辉

柳福提高增辉:宜宾学院物理与电子工程系, 四川宜宾 644000;张淑华: 宜宾学院化学与化工系, 四川宜宾 644000

收稿日期:2009-09-16 出版日期:2010-01-16 发布日期:2010-03-25
作者简介:柳福提(1978-),男,硕士,主要从事凝聚态物理研究.Email: futiliu@163.com
基金资助:
四川省科技厅基金资助项目(07JY029-126)

The optical property of GaN under high pressure

Received:2009-09-16 Online:2010-01-16 Published:2010-03-25

摘要/Abstract

摘要：

根据密度泛函理论,采用平面波赝势和广义梯度方法,研究了闪锌矿结构的GaN晶体在不同压强下的光学性质。结果表明,随着压强的增大,直接带隙和间接带隙都逐渐增大;在外界压强为125GPa时,GaN从直接带隙半导体变成间接带隙半导体，吸收波段出现了蓝移的现象。

关键词: 密度泛函理论;闪锌矿结构;态密度

Abstract:

The optical property of zinc blend structure GaN under different highpressures was investigated by means of the plane wave pseudo-potential method with generalized gradient approximation. The results show the indirect band gap and the direct band gap widened with pressure increasing. GaN changed from direct band gap to indirect band gap semiconductor when ambient pressure reaches 125GPa.　Also, there was a blue shift at absorption wavelength with increasing pressure.

Key words: density functional theory; zinc blende structure; density ofstates

柳福提张淑华高增辉. 高压下GaN的光学特性[J]. J4, 2010, 45(1): 69-72.

LIU Fu-Ti, ZHANG Shu-Hua, GAO Ceng-Hui. The optical property of GaN under high pressure[J]. J4, 2010, 45(1): 69-72.

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