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Effect of Si interlayer on GaAs/AlAs hetero-junction

LI Yong-ping1, LIU Jie1*, JIANG Yong-chao1, TIAN Qiang2   

  1. 1. School of Science, Qingdao Agricultural University, Qingdao 266109, Shandong, China; 2. Department of Physics, Beijing Normal University, Beijing 100875, China
  • Received:1900-01-01 Revised:1900-01-01 Online:2006-10-24 Published:2006-10-24
  • Contact: LI Yong-ping

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Abstract: GaAs/Si/AlAs heterojunctions prepared by MBE were examined. The influence of 0.5 ML and 1ML Si interlayer on GaAs/AlAs were investigated by DLTS technique and XPS measurement. The results reveal that the Si interlayer has little influence on the crystal, and the valenceband offset of GaAs/AlAs is increased because of the presence of the Si interlayer.

Key words: Deep level transient spectroscopy , X-ray photoelectron spectroscopy, Si interlayer, GaAs/AlAs hetero-junction

CLC Number: 

  • TN405
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