JOURNAL OF SHANDONG UNIVERSITY(NATURAL SCIENCE) ›› 2023, Vol. 58 ›› Issue (4): 1-7.doi: 10.6040/j.issn.1671-9352.0.2021.808

   

Local discontinuous Galerkin method and numerical simulation of semiconductor drift-diffusion model

XIAO Hong-dan, LIU Yun-xian*   

  1. School of Mathematics, Shandong University, Jinan 250100, Shandong, China
  • Published:2023-03-27

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Abstract: This paper considers the local discontinuous Galerkin(LDG)method for one-dimensional and two-dimensional problems of semiconductor drift-diffusion(DD)model, and performs numerical simulations. When simulating a one-dimensional problem, fine meshes are used in the parts where the concentration changes sharply, and coarse meshes are used in the places where the concentration changes gently, and compared with the numerical simulation of uniform meshes, it realizes the purpose of saving space and dividing the number of elements and speeding up the running speed under non-uniform division. When simulating two-dimensional problems, a combination of Dirichlet and Neumann boundaries is used. Numerical results verify the stability of the LDG method.

Key words: semiconductor, drift-diffusion model, local discontinuous Galerkin method

CLC Number: 

  • O241.82
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