J4 ›› 2013, Vol. 48 ›› Issue (7): 24-28.

• Articles • Previous Articles     Next Articles

Detailed level-by-level study of dielectronic recombination for neon-like xenon

YANG Jian-hui, FAN Qiang*, ZHANG Jian-ping   

  1. School of Physics and Electronic Engineering, Leshan Normal University, Leshan 614004, Sichuan, China
  • Received:2013-03-29 Published:2013-12-03

Abstract:

The dielectronic recombination (DR) rate coefficient for neon-like xenon in the ground state has been performed using relativistic configuration interaction (RCI) method over a wide temperature ranging from 0.01EI to 10EI (EI=3332eV), where EI is the ionization energy of the Na-like xenon. The results show, the domain contribution comes from (2s2p)73ln′l′ series, which is about 90% of the total DR rate coefficient, in which the main contribution comes from (2s2p)73l3l′ and (2s2p)73l4l′ configurations, and the proportion is more than 70% of the DR rate coefficient for (2s2p)73ln′l′ complex. The contribution of (2s2p)73ln′l′ complex with l′>8 are found to be negligible. The contribution of high Rydberg states of (2s2p)73ln′l′ complex obeys the complex-complex n′-3 extrapolation.

Key words: relativistic configuration interaction (RCI) method; rate coefficient; dielectronic recombination

CLC Number: 

  • O562.4
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