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J4 ›› 2013, Vol. 48 ›› Issue (7): 24-28.

• 前沿进展 • 上一篇    下一篇

类氖氙离子基态的双电子复合过程研究

杨建会,范强*,张建平   

  1. 乐山师范学院物理与电子工程学院, 四川 乐山 614004
  • 收稿日期:2013-03-29 发布日期:2013-12-03
  • 通讯作者: 范强(1982- ),男,讲师,博士研究生,主要从事凝聚态物理研究. Email:fq20021220@foxmail.com
  • 作者简介:杨建会(1980- ),女,副教授,博士研究生,主要从事原子结构和计算材料研究. Email:yjh20021220@foxmail.com
  • 基金资助:

    四川省科技厅资助科研项目(2011JYZ005);四川省教育厅资助科研项目(13ZB0111);乐山师范学院人才启动科研项目(Z1165,Z1273)

Detailed level-by-level study of dielectronic recombination for neon-like xenon

YANG Jian-hui, FAN Qiang*, ZHANG Jian-ping   

  1. School of Physics and Electronic Engineering, Leshan Normal University, Leshan 614004, Sichuan, China
  • Received:2013-03-29 Published:2013-12-03

摘要:

使用相对论组态相互作用方法计算了电子温度在0.01EI≤kTe≤10EI(EI=3332eV,是类钠Xe43+离子的第一电离能)范围内基态类氖Xe44+离子的双电子复合(DR)速率系数。对类氖Xe44+离子基态DR过程贡献最大的是(2s2p)73ln′l′双激发自电离组态,对总DR速率系数的贡献略大于90%,其中最主要的贡献来自(2s2p)73l3l′,(2s2p)73l4l′组态,占总速率系数的70%以上。对于通过(2s2p)73ln′l′类钠氙离子双激发自电离组态的双电子复合过程,l′>8的贡献可以忽略,n′>12的贡献满足n′-3组态-组态外推法则。

关键词: 相对论组态相互作用;双电子复合;速率系数

Abstract:

The dielectronic recombination (DR) rate coefficient for neon-like xenon in the ground state has been performed using relativistic configuration interaction (RCI) method over a wide temperature ranging from 0.01EI to 10EI (EI=3332eV), where EI is the ionization energy of the Na-like xenon. The results show, the domain contribution comes from (2s2p)73ln′l′ series, which is about 90% of the total DR rate coefficient, in which the main contribution comes from (2s2p)73l3l′ and (2s2p)73l4l′ configurations, and the proportion is more than 70% of the DR rate coefficient for (2s2p)73ln′l′ complex. The contribution of (2s2p)73ln′l′ complex with l′>8 are found to be negligible. The contribution of high Rydberg states of (2s2p)73ln′l′ complex obeys the complex-complex n′-3 extrapolation.

Key words: relativistic configuration interaction (RCI) method; rate coefficient; dielectronic recombination

中图分类号: 

  • O562.4
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